| 摘要 |
The present invention describes a method for estimating the electrical characteristics of analog circuits integrated in a semiconductor crystal by means of continuous temperature measurement. Figure 1 shows a semiconductor crystal (1) which can contain various analog circuits (2). For example, without aiming to restrict the scope of the present method, the figure shows an amplifier. Said amplifier has signal inputs (4) and electric voltage inputs (3). Continuous polarisation of the circuit by applying a voltage to the electric voltage inputs (3), without applying a signal to the inputs (4), causes the devices that form the amplifier to dissipate power. Measurements of the temperature increase caused by said power dissipation at selected points of the semiconductor (5) make it possible to obtain characteristics of the analog circuit, such as, without aiming to restrict the scope of the present procedure, amplifier gain. The temperature is measured continuously, either by means of temperature sensors built into the actual semiconductor crystal or by means of external sensors.
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