APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide an apparatus for producing silicon carbide single crystal that can produce a high-quality silicon carbide single crystal by adjusting a growth condition during growing a crystal, and to provide a method for producing silicon carbide single crystal.

SOLUTION: The apparatus for producing silicon carbide single crystal includes: a crucible 3 consisting of a crucible upper part 3a and a crucible lower part 3b; a first support member 7 for supporting at least the crucible lower part 3b selected from the crucible upper part 3a and the crucible lower part 3b; a second support member 8 for supporting a pedestal 4; weight sensors 9 and 10 for detecting weights of the first support member 7 and the second support member 8 respectively independently; and a heating means arranged around the crucible 3. The first support member 7 and the second support member 8 are arranged relatively movably to the vertical direction.

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