发明名称 |
HIGHLY SELECTIVE SPACER ETCH PROCESS WITH REDUCED SIDEWALL SPACER SLIMMING |
摘要 |
A method for performing a spacer etch process is described. The method includes conformally applying a spacer material over a gate structure on a substrate, and performing a spacer etch process sequence to partially remove the spacer material from a capping region of the gate structure and a substrate region on the substrate adjacent a base of the gate structure, while retaining a spacer sidewall positioned along a sidewall of the gate structure.
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申请公布号 |
US2013164940(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201113336388 |
申请日期 |
2011.12.23 |
申请人 |
RALEY ANGELIQUE DENISE;MORI TAKUYA;OHTAKE HIROTO;TOKYO ELECTRON LIMITED |
发明人 |
RALEY ANGELIQUE DENISE;MORI TAKUYA;OHTAKE HIROTO |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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