| 摘要 |
Programming a variable resistance element includes: a writing step of applying a writing voltage pulse to transition metal oxide comprising two stacked metal oxide layers to decrease resistance of the metal oxide, each metal oxide layer having different oxygen deficiency; and an erasing step of applying an erasing voltage pulse, of different polarity than the writing pulse, to the metal oxide to increase resistance of the metal oxide. |Vw1|>|Vw2|. Vw1 represents writing voltage for first to N-th steps, Vw2 represents writing voltage for (N+1)-th and subsequent steps, where N>=1, |Ve1|>|Ve2|. Ve1 represents erasing voltage for first to M-th steps. Vet represents erasing voltage for M+1-th and subsequent steps. tw1<te1. tw1 represents writing pulse width for first to N-th steps. te1 represents erasing pulse width for first to M-th steps. M>=1. The (N+1)-th writing step follows the M-th erasing step.
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