WEAR-LEVEL OF CELLS/PAGES/SUB-PAGES/BLOCKS OF A MEMORY

摘要

The invention is directed to a method for wear-leveling cells or pages or sub-pages or blocks of a memory such as a flash memory, the method comprising:-receiving (S10) a chunk of data to be written on a cell or page or sub-page or block of the memory;-counting (S40) in the received chunk of data the number of times a given type of binary data '0' or 'I' is to be written; and-distributing (S50) the writing of the received chunk of data amongst cells or pages or sub-pages or blocks of the memory such as to wear-level the memory with respect to the number of the given type of binary data '0' or 'I' counted in the chunk of data to be written.