发明名称 |
NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A three-dimensional non-volatile memory device that may increase erase operation efficiency during an erase operation using Gate-Induced Drain Leakage (GIDL) current and a method for fabricating the three-dimensional non-volatile memory device. The non-volatile memory device includes a channel structure formed over a substrate including a plurality of inter-layer dielectric layers and a plurality of channel layers that are alternately stacked, and a first selection gate and a second selection gate that are disposed on a first side and a second side of the channel structure, wherein the first selection gate and the second selection gate contact sidewalls of the multiple channel layers, respectively, wherein a work function of a material forming the first selection gate is different from a work function of a material forming the second selection gate. |
申请公布号 |
US2013161717(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201213607243 |
申请日期 |
2012.09.07 |
申请人 |
CHOI SANG-MOO;PARK BYUNG-SOO;OH SANG-HYUN;JOO HAN-SOO |
发明人 |
CHOI SANG-MOO;PARK BYUNG-SOO;OH SANG-HYUN;JOO HAN-SOO |
分类号 |
H01L29/78;H01L21/04;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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