| 摘要 |
An IC device (100) includes an IC body (106) having a base layer (108) and first and second upper layers (114, 116) on the base layer. The IC body includes a cavity region (104) extending through said base and first upper layers and at least a portion of said second upper layer. In the IC device, a portion of said second upper layer in the cavity region comprises a planar inductive element (102) having first and second contacting ends (140, 142). In the IC device, at least one support member (128, 130, 132) extends at least partially into said cavity region from said IC body in at least a first direction parallel to said base layer and intersects at least a portion of said planar inductive element.
|
