发明名称 |
Absorbers For High-Efficiency Thin-Film PV |
摘要 |
Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for forming a Cu-In-Ga layer followed by partial or full selenization. This results in a higher Ga concentration at the back interface. The substrate is then exposed to an aluminum CVD precursor while the substrate is still in the selenization equipment to deposit a thin Al layer. The substrate is then exposed to a Se source to fully convert the absorber layer. This results in a higher Al concentration at the front of the absorber. |
申请公布号 |
US2013164886(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201213596439 |
申请日期 |
2012.08.28 |
申请人 |
LIANG HAIFAN;VAN DURENT JEROEN;INTERMOLECULAR, INC. |
发明人 |
LIANG HAIFAN;VAN DURENT JEROEN |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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