ONE-TIME PROGRAMMABLE MEMORY AND METHOD FOR MAKING THE SAME
摘要
A one time programmable nonvolatile memory formed from metal-insulator-semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting doped semiconductor lines formed in a semiconductor substrate.
申请公布号
US2013161761(A1)
申请公布日期
2013.06.27
申请号
US201213687925
申请日期
2012.11.28
申请人
KILOPASS TECHNOLOGY, INC.;KILOPASS TECHNOLOGY, INC.
