发明名称 |
THIN FILM TRANSISTOR HAVING ACTIVE LAYER CONSISTING OF INDIUM CONTAINING SILICON AND GERMANIUM AND DISPLAY DEVICE HAVING THE SAME |
摘要 |
<p>PURPOSE: A thin film transistor having an active layer consisting of indium containing silicon and germanium and a display device having the same are provided to secure an active layer having high electrical characteristic. CONSTITUTION: A gate insulating layer(120) is formed on a substrate. An active layer(130) includes a channel region. The active layer is made of a material of In, Si, Ge, and O composition. A source electrode(140) is separated from a drain electrode(150) on the gate insulating layer. The source electrode and the drain electrode are electrically connected to the active layer.</p> |
申请公布号 |
KR20130068367(A) |
申请公布日期 |
2013.06.26 |
申请号 |
KR20110135471 |
申请日期 |
2011.12.15 |
申请人 |
SAMSUNG CORNING PRECISION MATERIALS CO., LTD. |
发明人 |
HAN, JIN WOO;YU, TAE HWAN;CHO, JO HANN;LEE, SEUNG JU |
分类号 |
H01L29/786;H01L51/50 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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