发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
<p>Provided is a method of forming a tantalum oxide-based film having good step coverage while controlling an oxygen concentration in the film. The method includes forming a tantalum nitride layer on a substrate by supplying a source gas including a tantalum and a nitriding agent into a process chamber wherein the substrate is accommodated under a condition where a chemical vapor deposition (CVD) reaction is caused; oxidizing the tantalum nitride layer by supplying an oxidizing agent into the process chamber under a condition where an oxidation reaction of the tantalum nitride layer by the oxidizing agent is unsaturated; and forming on the substrate a conductive tantalum oxynitride film wherein an oxygen is stoichiometrically insufficient with respect to the tantalum and a nitrogen by alternately repeating forming the tantalum nitride layer on the substrate and oxidizing the tantalum nitride layer a plurality of times.</p> |
申请公布号 |
KR101278915(B1) |
申请公布日期 |
2013.06.26 |
申请号 |
KR20110080406 |
申请日期 |
2011.08.12 |
申请人 |
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发明人 |
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分类号 |
H01L21/205;H01L21/8247;H01L27/115 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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