| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to manufacture the semiconductor device with high reliability, by suppressing generation of void at the interface between the semiconductor device and an under fill sheet. CONSTITUTION: A rear grinding tape (1) and a sealing sheet comprising an under fill material (2) are prepared. The rear grinding tape includes a base film and an adhesive layer. A connection member (4) of a semiconductor wafer (3) is formed on a circuit surface (3a). The circuit surface and the under fill material of the sealing sheet are compressed. A semiconductor device having the under fill material is formed by dicing the semiconductor wafer. The semiconductor device and an adherend are connected through the connection member.</p> |
