| 摘要 |
PURPOSE: A manufacturing apparatus of poly-crystal silicon ingot is provided to solve a defect of silicon growth by solving a thermal unbalance, and to achieve silicon coagulation effectively by increasing and decreasing the whole size of the ingot manufacturing apparatus according to the structural characteristic of an opening device. CONSTITUTION: A manufacturing method of poly-crystal silicon ingot comprises: a vacuum chamber, a crucible (200) accommodating a raw material of silicon, a heater, a susceptor, a cooling plate (400), a door opening device (500), a temperature sensor measuring temperature of the crucible, and a control unit. The door opening device restricts heat release to grow or melt silicon by being equipped between the crucible and the cooling plate. The control unit manages temperature in the crucible for an even growth and melting of the silicon by receiving output values from the temperature sensor. The door opening device is equipped with at least one wing (510). An operating unit is comprised to rotate the wing to control the heat release between the cooling plate and the crucible by rotating the wing horizontally. A sliding module (700) is comprised to slide the door opening device to the vertical direction of the wing. |
