| 摘要 |
PURPOSE: An atomic layer deposition device providing direct plasma is provided to improve the quality of a thin film by providing the direct plasma. CONSTITUTION: A process chamber(101) accommodates multiple substrates. A susceptor(102) rotates the substrate. A gas injector(103) is composed of a plurality of injection areas to provide deposition gases. A direct plasma provider is formed on the gas injector and excites a corresponding gas to a plasma state.
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