| 摘要 |
A method is disclosed to fabricate an electro-mechanical device such as a MEMS or NEMS switch. The method includes providing a silicon layer disposed over an insulating layer that is disposed on a silicon substrate; releasing a portion of the silicon layer from the insulating layer so that it is at least partially suspended over a cavity in the insulating layer; depositing a metal (e.g., Pt) on at least one surface of at least the released portion of the silicon layer and, using a thermal process, fully siliciding at least the released portion of the silicon layer using the deposited metal. The method eliminates silicide-induced stress to the released Si member, as the entire Si member is silicided. Furthermore no conventional wet chemical etch is used after forming the fully silicided material thereby reducing a possibility of causing corrosion of the silicide and an increase in stiction.
|
