发明名称 Power MOSFET contact metallization
摘要 A structure includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector includes aluminum. A surface of the insulator and a surface of the electrical contact form a substantially even surface.
申请公布号 US8471390(B2) 申请公布日期 2013.06.25
申请号 US20070799889 申请日期 2007.05.02
申请人 WONG RONALD;QI JASON;TERRILL KYLE;CHEN KUO-IN;VISHAY-SILICONIX 发明人 WONG RONALD;QI JASON;TERRILL KYLE;CHEN KUO-IN
分类号 H01L23/48 主分类号 H01L23/48
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