发明名称 |
Power MOSFET contact metallization |
摘要 |
A structure includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector includes aluminum. A surface of the insulator and a surface of the electrical contact form a substantially even surface.
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申请公布号 |
US8471390(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US20070799889 |
申请日期 |
2007.05.02 |
申请人 |
WONG RONALD;QI JASON;TERRILL KYLE;CHEN KUO-IN;VISHAY-SILICONIX |
发明人 |
WONG RONALD;QI JASON;TERRILL KYLE;CHEN KUO-IN |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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