| 摘要 |
A semiconductor memory device according to an embodiment includes a cell array block having a plurality of cell arrays stacked therein, each of the cell arrays including a plurality of memory cells and a plurality of selective wirings selecting the plurality of memory cells are stacked, a pillar-shaped first via extending in a stack direction from a first height to a second height and having side surfaces connected to a first wiring, and a pillar-shaped second via extending in the stack direction from the first height to the second height and having side surfaces connected to a second wiring upper than the first wiring, the second wiring being thicker in the stack direction than the first wiring and having a higher resistivity than the first wiring.
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