发明名称 |
Semiconductor device and manufacturing method of the same |
摘要 |
A trench is formed so as to reach a p--type epitaxial layer from an upper surface of a source region. A gate electrode is formed so as to bury the trench. Each of body contact trenches is formed away from the gate electrode. A body contact region is formed at the bottom of the body contact trench. An n-type semiconductor region that is a feature of the present invention is formed in a layer below each body contact region. The impurity concentration of the n-type semiconductor region is higher than a channel forming area and lower than the body contact region.
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申请公布号 |
US8471333(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US201213540586 |
申请日期 |
2012.07.02 |
申请人 |
MATSUURA HITOSHI;NAKAZAWA YOSHITO;RENESAS ELECTRONICS CORPORATION |
发明人 |
MATSUURA HITOSHI;NAKAZAWA YOSHITO |
分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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