发明名称 |
Compensation of non-volatile memory chip non-idealities by program pulse adjustment |
摘要 |
To program a set of non-volatile storage elements, a set of programming pulses are applied to the control gates (or other terminals) of the non-volatile storage elements. The programming pulses have pulse widths that vary as a function of simulated pulse magnitude data. The programming pulses can also have pulse magnitudes that vary based on measurements taken while testing the set of non-volatile storage elements. In one embodiment, the pulse widths are determined after simulation performed prior to fabrication of the non-volatile storage elements. In another embodiment, the pulse magnitudes are calculated after fabrication of the non-volatile storage elements.
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申请公布号 |
US8472255(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US201213605714 |
申请日期 |
2012.09.06 |
申请人 |
MOKHLESI NIMA;ZHAO DENGTAO;CHIN HENRY;SAMADDAR TAPAN;SANDISK TECHNOLOGIES INC. |
发明人 |
MOKHLESI NIMA;ZHAO DENGTAO;CHIN HENRY;SAMADDAR TAPAN |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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