| 摘要 |
<P>PROBLEM TO BE SOLVED: To arrange a wafer so that a distance from a susceptor arranged to surround a sample table becomes uniform. <P>SOLUTION: Provided are a vacuum processing chamber, a process gas supply device supplying a process gas into the vacuum processing chamber, a sample table arranged in the vacuum processing chamber and on which a sample is mounted, a substrate bias power supply supplying a substrate bias voltage to the sample table, plasma generation means generating plasma in the vacuum processing chamber, a susceptor arranged on outer periphery of the sample table, and a vacuum transfer device. A plasma processing method for mounting an unprocessed sample on the sample table by the vacuum transfer device and carrying the processed sample out from the processing table, includes: measuring distribution of a processing speed for the processed sample; calculating deviation of a position of the sample to a position of the susceptor on the basis of the measured distribution of the processing speed; and adjusting a transfer position by the vacuum transfer device on the basis of the calculation result. <P>COPYRIGHT: (C)2013,JPO&INPIT |
