| 摘要 |
A semiconductor integrated-circuit device using the copper wiring having increased electromigration resistance, low resistivity, and a line width of 70 nm or less, is provided. The present invention is characterized by the annealing treatment wherein a copper wiring having a line width of 70 nm or less is heated with a heating rate of 1K to 10K per second, and then the temperature is constantly maintained for a prescribed time duration. |
