| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly-reliable semiconductor device having small variation in a reverse withstanding voltage compared with a conventional semiconductor device. <P>SOLUTION: A semiconductor device 100 has: an n<SP POS="POST">-</SP>type semiconductor layer (a first semiconductor layer of a first conductivity type) 114; and a p<SP POS="POST">+</SP>type semiconductor layer (a second semiconductor layer of a second conductivity type) 120. In the semiconductor device 100, a pn junction is formed between the n<SP POS="POST">-</SP>type semiconductor layer 114 and the p<SP POS="POST">+</SP>type semiconductor layer 120. In all or a part of a plurality of straight parts 122, a groove having such a structure where "a predetermined part including a PN junction exposure part 128 and having a depth equal to or less than a depth of a bottom face of the p<SP POS="POST">+</SP>type semiconductor layer 120" is removed is formed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
