THREE DIMENSION NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM COMPRISING THE SAME AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A 3D nonvolatile memory device, a memory system including the same, and a manufacturing method thereof are provided to improve a program speed by forming an air gap in a space between conductive films. CONSTITUTION: Multiple vertical channel films are protruded from a substrate. Multiple interlayer insulating films(103,131) are alternatively laminated along the vertical channel films. Multiple memory cells are alternatively laminated along the vertical channel films. The memory cells include a memory film(119) and a conductive film(129) for a word line, respectively. An air gap is formed in the interlayer insulating films.