SEMICONDUCTOR DEVICE INCLUDING STEP INDEX GATE ELECTRODE AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A semiconductor device including a step gate electrode and a manufacturing method thereof are provided to increase a breakdown voltage by using optical photoresist and two nitride layers. CONSTITUTION: A cap layer(211) is formed on a semiconductor substrate. An active area is formed by etching a part of the cap layer. A resist pattern is formed on the active area and the cap layer. A step gate electrode(225) is formed by depositing heat-resistant metal. An insulation layer(227) is deposited by removing a gate head pattern.