发明名称 |
SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE AND METHOD OF MANUFACTURING THE SAME AND STACKED PACKAGE INCLUDING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device including a wafer having an upper surface and a lower surface, circuit layers formed on the upper surface and the lower surface of the wafer, respectively, and a through electrode formed to penetrate the wafer is presented. The through electrode can be configured to electrically coupled the circuit layers formed on the upper surface and the lower surface of the wafer. The semiconductor device can be stacked to form a stacked package.
|
申请公布号 |
US2013154111(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201213445736 |
申请日期 |
2012.04.12 |
申请人 |
BYEON SANG JIN;HYNIX SEMICONDUCTOR, INC. |
发明人 |
BYEON SANG JIN |
分类号 |
H01L23/538;H01L21/50;H01L21/768 |
主分类号 |
H01L23/538 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|