发明名称 |
METHOD AND SYSTEM FOR SETTING A PINNED LAYER IN A MAGNETIC TUNNELING JUNCTION |
摘要 |
A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.
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申请公布号 |
US2013154034(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201113332093 |
申请日期 |
2011.12.20 |
申请人 |
APALKOV DMYTRO;KHVALKOVSKIY ALEXEY VASILYEVITCH;NIKITIN VLADIMIR;KROUNBI MOHAMAD TOWFIK;TANG XUETI;OH SE CHUNG;LIM WOO CHANG;LEE JANG EUN;KIM KI WOONG;KIM KYOUNG SUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
APALKOV DMYTRO;KHVALKOVSKIY ALEXEY VASILYEVITCH;NIKITIN VLADIMIR;KROUNBI MOHAMAD TOWFIK;TANG XUETI;OH SE CHUNG;LIM WOO CHANG;LEE JANG EUN;KIM KI WOONG;KIM KYOUNG SUN |
分类号 |
H01L29/82;H01L21/02 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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地址 |
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