发明名称 |
RARE-EARTH OXIDE ISOLATED SEMICONDUCTOR FIN |
摘要 |
A dielectric template layer is deposited on a substrate. Line trenches are formed within the dielectric template layer by an anisotropic etch that employs a patterned mask layer. The patterned mask layer can be a patterned photoresist layer, or a patterned hard mask layer that is formed by other image transfer methods. A lower portion of each line trench is filled with an epitaxial rare-earth oxide material by a selective rare-earth oxide epitaxy process. An upper portion of each line trench is filled with an epitaxial semiconductor material by a selective semiconductor epitaxy process. The dielectric template layer is recessed to form a dielectric material layer that provides lateral electrical isolation among fin structures, each of which includes a stack of a rare-earth oxide fin portion and a semiconductor fin portion.
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申请公布号 |
US2013154007(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201113328358 |
申请日期 |
2011.12.16 |
申请人 |
CHENG KANGGUO;ERVIN JOSEPH;PEI CHENGWEN;TODI RAVI M.;WANG GENG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;ERVIN JOSEPH;PEI CHENGWEN;TODI RAVI M.;WANG GENG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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