| 摘要 |
A MOSFET includes: a substrate having a trench formed therein and made of silicon carbide, the trench being opened on one main surface side and having a side wall surface; a gate insulating film formed on the side wall surface in contact therewith; and a gate electrode formed on the gate insulating film in contact therewith, wherein a square region with each side of 100 nm in the side wall surface has a surface roughness of not more than 1.0 nm in RMS.
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