发明名称 IONIC BARRIER FOR FLOATING GATE IN VIVO BIOSENSORS
摘要 An ion-sensitive sensor includes a dielectric layer comprising Al2O3 having a functionalized surface configured to bond with an analyte. The ion-sensitive sensor is immersed in an electrolytic solution containing a concentration of alkali ions. An electrode is arranged to apply an electric potential to the functionalized surface of the ion-sensitive sensor. In some embodiments the ion-sensitive sensor is an ion-sensitive silicon FET. In some embodiments the ion-sensitive sensor is an ion-sensitive polymer FET. In some embodiments, the electrode comprises a perforated gate metal layer disposed on the gate dielectric layer of an ion-sensitive FET, and the functionalized surface is disposed in openings of the perforated gate metal layer. In some embodiments the dielectric layer comprises a multi-layer dielectric stack including at least one Al2O3 layer. In some embodiments the dielectric layer is deposited by atomic layer deposition (ALD).
申请公布号 US2013158378(A1) 申请公布日期 2013.06.20
申请号 US201213624197 申请日期 2012.09.21
申请人 THE OHIO STATE UNIVERSITY;THE OHIO STATE UNIVERSITY 发明人 BERGER PAUL R.;RAMESH ANISHA
分类号 A61B5/145;A61B5/1473;H01L21/02 主分类号 A61B5/145
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