发明名称 |
IONIC BARRIER FOR FLOATING GATE IN VIVO BIOSENSORS |
摘要 |
An ion-sensitive sensor includes a dielectric layer comprising Al2O3 having a functionalized surface configured to bond with an analyte. The ion-sensitive sensor is immersed in an electrolytic solution containing a concentration of alkali ions. An electrode is arranged to apply an electric potential to the functionalized surface of the ion-sensitive sensor. In some embodiments the ion-sensitive sensor is an ion-sensitive silicon FET. In some embodiments the ion-sensitive sensor is an ion-sensitive polymer FET. In some embodiments, the electrode comprises a perforated gate metal layer disposed on the gate dielectric layer of an ion-sensitive FET, and the functionalized surface is disposed in openings of the perforated gate metal layer. In some embodiments the dielectric layer comprises a multi-layer dielectric stack including at least one Al2O3 layer. In some embodiments the dielectric layer is deposited by atomic layer deposition (ALD). |
申请公布号 |
US2013158378(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201213624197 |
申请日期 |
2012.09.21 |
申请人 |
THE OHIO STATE UNIVERSITY;THE OHIO STATE UNIVERSITY |
发明人 |
BERGER PAUL R.;RAMESH ANISHA |
分类号 |
A61B5/145;A61B5/1473;H01L21/02 |
主分类号 |
A61B5/145 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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