| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, by which a negative pattern can be formed with high resolution and in a favorable shape, and to provide a resist composition suitable to be used for the method. <P>SOLUTION: The method for forming a resist pattern includes the steps of: (1) forming a resist film 2 by coating a support body 1 with a resist composition containing a base component (A) that generates a base by exposure and increases the solubility with an alkali developing solution by an action of an acid; (2) exposing the resist film 2; (3) baking the resist film after the step (2); and forming a negative resist pattern by developing the resist film 2 with an alkali to dissolve and remove an unexposed portion 2b of the resist film 2. The resist composition used for the step (1) is also disclosed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
