METHOD FOR MANUFACTURING THIN FILM TRANSISTOR HAVING THREE-LAYERED METAL GATE ELEMENT

摘要

PURPOSE: A method for manufacturing a thin film transistor substrate with a triple metal layer gate element is provided to remove a tip generated in a triple metal layer with a deformed photoresist together, by adjusting contents of an ashing gas and ashing process time. CONSTITUTION: A gate metal layer is formed by coating a bottom layer(MT1), a middle layer(C) and a top layer(MT2) continuously on a substrate(SUB). A photoresist(PR) is coated on the top layer. A gate element is formed by etching the bottom layer, the middle layer and the top layer using a photoresist pattern. A residual tip part of a part of the photoresist and the bottom layer and the top layer are ashed. The photoresist is removed. An insulating layer is coated on the gate element.