| 摘要 |
<p>[Problem] To rapidly carry out reaction gas switching when forming a thin film when supplying to substrates a plurality of types of gases that react with each other in order. [Solution] A gas flow through space (P1) is formed to the outside of a position separated 5.0 - 40.0 mm toward the peripheral side of the center position of a wafer (W) on a mounting part (3). In addition, processing gas and purging gas are supplied to this gas flow through space (P1) from a gas drop-down space (P2) formed on the center part side of the wafer (W). Furthermore, the height position and attitude of the mounting part (3) to a top plate part (4) is set such that the height dimension (j) for this gas flow through space (P1) is formed evenly across the surface and is 10.0 mm or less when a film forming process is carried out on the wafer (W).</p> |
