发明名称 THIN FILM TRANSISTOR ARRAY PANEL HAVING IMPROVED STORAGE CAPACITANCE AND MANUFACTURING METHOD THEREOF
摘要 A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.
申请公布号 US2013153906(A1) 申请公布日期 2013.06.20
申请号 US201213668082 申请日期 2012.11.02
申请人 SAMSUNG DISPLAY CO., LTD.;SAMSUNG DISPLAY CO., LTD. 发明人 RYU HYE-YOUNG;KIM JANG-SOO;KIM SANG-GAB;CHIN HONG-KEE;OH MIN-SEOK;CHOE HEE-HWAN;KIM SHI-YUL
分类号 G02F1/1362 主分类号 G02F1/1362
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