METHOD FOR GROWING SiC CRYSTAL

摘要

Provided is a method and the like for heteroepitaxially growing an SiC crystal on a sapphire substrate. The method is provided with a step for heating to a temperature no greater than the melting point of the sapphire substrate, and achieving the state of the sapphire substrate and a solution containing silicon being in contact with a film containing carbon therebetween. A step is provided for maintaining the aforementioned state until a portion of the film containing carbon dissipates resulting in the solution and the sapphire substrate being in direct contact at the portion of dissipation. A step is provided for cooling the solution after a portion of the film containing carbon dissipates.