发明名称 |
METHOD FOR CHEMICAL MODIFICATION OF A GRAPHENE EDGE, GRAPHENE WITH A CHEMICALLY MODIFIED EDGE AND DEVICES INCLUDING THE GRAPHENE |
摘要 |
A method for chemical modification of graphene includes dry etching graphene to provide an etched graphene; and introducing a functional group at an edge of the etched graphene. Also disclosed is graphene, including an etched edge portion, the etched portion including a functional group.
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申请公布号 |
US2013157034(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201313766876 |
申请日期 |
2013.02.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI WON MOOK;HONG BYUNG HEE;CHOI JAEYOUNG |
分类号 |
C01B31/04;C07C31/125;C07C31/20;C07C47/02;C07C49/12;C07C53/128;C07C69/22 |
主分类号 |
C01B31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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