| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve both high reflectivity and low contact resistance of a p-side electrode of a semiconductor light-emitting device. <P>SOLUTION: A semiconductor light-emitting device 1 includes a semiconductor layer 15 having a light-emitting layer 12a, and a p-side electrode 14 and an n-side electrode 22 provided on the semiconductor layer. The p-side electrode has: a plurality of contact metals 18 that are selectively provided on the semiconductor layer so as to be in contact with the a second surface of the semiconductor layer; a transparent film 19 that is provided on the semiconductor layer so as to be in contact with the second surface between the plurality of contact metals and has a higher transmissivity to light emitted from the light-emitting layer than the contact metals; and a reflection metal 20 that is provided on the contact metals and the transparent film so as to be in contact with the contact metals, and contains silver. The area of the reflection metal on the light-emitting layer side is larger than the total sum of the areas in which the plurality of contact metals are in contact with the semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
