发明名称 |
Electrostatic Discharge Protection Device and Method |
摘要 |
Embodiments of the invention relate to an electrostatic discharge (ESD) device and method for forming an ESD device. An embodiment is an ESD protection device comprising a p well disposed in a substrate, an n well disposed in the substrate, a high voltage n well (HVNW) disposed between the p well and the n well in the substrate, a source n+ region disposed in the p well, and a plurality of drain n+ regions disposed in the n well.
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申请公布号 |
US2013157430(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201313769650 |
申请日期 |
2013.02.18 |
申请人 |
LTD. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY,;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SHEU MING-SONG;LEE JIAN-HSING;FENG YAO-WU |
分类号 |
H01L29/66;H01L21/22;H01L21/265 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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