发明名称 Electrostatic Discharge Protection Device and Method
摘要 Embodiments of the invention relate to an electrostatic discharge (ESD) device and method for forming an ESD device. An embodiment is an ESD protection device comprising a p well disposed in a substrate, an n well disposed in the substrate, a high voltage n well (HVNW) disposed between the p well and the n well in the substrate, a source n+ region disposed in the p well, and a plurality of drain n+ regions disposed in the n well.
申请公布号 US2013157430(A1) 申请公布日期 2013.06.20
申请号 US201313769650 申请日期 2013.02.18
申请人 LTD. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY,;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 SHEU MING-SONG;LEE JIAN-HSING;FENG YAO-WU
分类号 H01L29/66;H01L21/22;H01L21/265 主分类号 H01L29/66
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