发明名称 DUMMY THROUGH-SILICON VIA CAPACITOR
摘要 An integrated circuit device includes dummy through-silicon vias (TSVs) that can be connected to one or more voltage references, thereby increasing a capacitance associated with the integrated circuit device, such as a decoupling capacitance. In addition, the dummy TSVs can be distributed based on the distribution of active TSVs in the device, thus increasing the stability and performance of the TSV manufacturing process.
申请公布号 US2013155636(A1) 申请公布日期 2013.06.20
申请号 US201213713667 申请日期 2012.12.13
申请人 PARK CHANGYOK 发明人 PARK CHANGYOK
分类号 H01L23/538;H01R4/00 主分类号 H01L23/538
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