MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME METHOD

摘要

PURPOSE: A semiconductor light emitting device manufacturing method and a semiconductor light emitting device which is manufactured by using the method are provided to minimize the plasma damage toward the semiconductor layer, thereby improving the efficiency of the light emitting device. CONSTITUTION: A light emitting structure which includes a first conductive type semiconductor layer(32), an active layer(34), and a second conductive semiconductor layer(36) are formed on a substrate. An insulating layer is formed on the light emitting structure by an atomic layer deposition method. A current blocking layer(42) is formed by etching the insulating layer, by using a mask. A current spreading layer is formed on the current blocking layer and an exposed second conductive semiconductor layer. An electrode is formed on the current spreading layer of an area which perpendicularly corresponded to the current blocking layer.