| 摘要 |
PURPOSE: A semiconductor device manufacturing method, a substrate processing method, a substrate processing apparatus, and a recording medium are provided to improve productivity when generating a SiCN film, thereby enhancing the concentration of carbon in SiCN. CONSTITUTION: A source gas with predetermined elements and halogen elements is supplied to a substrate. A reaction gas with carbon, nitrogen, and hydrogen is supplied to the substrate. The number of carbon atoms is greater than the number of nitrogen atoms in the reaction gas. A film including the predetermined elements, nitrogen and carbon is formed on the substrate by alternatively performing the above processes with a predetermined number. [Reference numerals] (AA) First cycle; (BB) Charge a wafer; (CC) Load a boat; (DD) Control a pressure; (EE) Control a temperature; (FF,II) Supply HCDS gas; (GG) Remove residual gas; (HH) Supply TEA gas; (JJ) Step 1; (KK) Step 2; (LL) Is it executed n times?; (MM) Fuzzy; (NN) Return atmospheric pressure; (OO) Unload the boat; (PP) Discharge the wafer |
