| 摘要 |
PURPOSE: A manufacturing method of a semiconductor device, a substrate processing method, a substrate processing apparatus, and a recording medium are provided to control a composition ratio of a SiOCN film or a SiOC film minutely, thereby improving etching resistive properties. CONSTITUTION: A predetermined source gas is supplied to a wafer in a processing chamber. A first reaction gas is supplied to the wafer in the processing chamber. A first layer including predetermined elements, nitrogen, and carbon is formed on the wafer by alternatively supplying the source gas and the first reaction gas reciprocally with a fixed number. A second layer is formed by supplying the source gas and a second reaction gas to the wafer in the processing chamber. A thin film with a predetermined composition and a predetermined thickness is formed on a wafer by performing a process of forming the first and second layers with a fixed number. The thin film includes the predetermined element. [Reference numerals] (AA) 1 cycle; (BB) Charge a wafer; (CC) Load a boat; (DD) Control a pressure; (EE) Control a temperature; (FF) Supply HCDS gas; (GG) Step 1; (HH,KK,NN) Remove residual gas; (II) Supply TEA gas; (JJ) Step 2; (LL) Supply O_2 gas; (MM) Step 3; (OO) Is it executed n times?; (PP) Fuzzy; (QQ) Return atmospheric pressure; (RR) Unload the boat; (SS) Discharge the wafer |
