| 摘要 |
The present invention relates to a tristate gate (1000, 2000) comprising an output port (1400, 2400) and at least two transistors (1200, 1300, 2200, 2300), each having at least a first and a second gate, configured such that a high-impedance value (Z) on the output port is set by controlling the threshold voltage of at least one of the transistors. |
