发明名称 |
METHOD OF GROWING SILICON SINGLE CRYSTAL |
摘要 |
<p>This method for producing silicon single crystals includes: growing a silicon single crystal by the Czochralski method while cooling at least part of the silicon single crystal under growth with a cooling member which circumferentially surrounds the silicon single crystal and has an inner contour that is coaxial with a pull axis, wherein an ambient gas in which the silicon single crystal is grown includes a hydrogen-atom-containing substance in gaseous form. This silicon single crystal is produced by the above method.</p> |
申请公布号 |
EP1895026(B1) |
申请公布日期 |
2013.06.19 |
申请号 |
EP20050782038 |
申请日期 |
2005.09.12 |
申请人 |
SUMCO CORPORATION |
发明人 |
INAMI, SHUICHI;MURAKAMI, HIROKI;TAKASE, NOBUMITSU;HAMADA, KEN;NAKAMURA, TSUYOSHI |
分类号 |
C30B15/14;C30B15/04;C30B29/06 |
主分类号 |
C30B15/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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