| 摘要 |
<P>PROBLEM TO BE SOLVED: To evaluate the sheet resistance of an HFET structure non-destructively and accurately. <P>SOLUTION: In the third step S103, sheet resistance of each test element for first calibration is measured by an eddy current method. In the fourth step S104, the sheet carrier concentration of each test element for second calibration is measured by Hall effect measurement while taking ohmic contact by a contact layer. In the fifth step S105, a calibration curve indicating correlation of the sheet resistance and sheet carrier concentration is created by the relation between a sheet resistance measured by a test element for first calibration and a sheet carrier concentration measured by a test element for second calibration, where the barrier layer has the same impurity concentration. <P>COPYRIGHT: (C)2013,JPO&INPIT |
