| 摘要 |
PURPOSE: A nonvolatile memory device including twin fins separated by a shield electrode and a NAND flash memory array using the same are provided to increase integration by preventing interference between adjacent cells using the shield electrode. CONSTITUTION: A fence type semiconductor(10a) is protrusively formed on a semiconductor substrate. An isolation insulating layer is filled in the fence type semiconductor with a preset height. A gate insulation layer stack(60) includes a charge storage layer on both sides of the fence type semiconductor on the isolation insulating layer. A control electrode(70) surrounds the gate insulation layer stack. The fence type semiconductor is vertically separated from the control electrode to form twin fins(11,12). An insulation layer is formed on both sides of the twin fins and a shield electrode is filled between the twin fins. |
