| 摘要 |
PURPOSE: A single poly EEPROM is provided to reduce the size of a single poly EEPROM cell by sharing a DNW(Deep N-Well) of a cell array. CONSTITUTION: An EEPROM includes an EEPROM cell array, a control logic unit(33), a row driving circuit(32), a BL sense amplifier, a TG driving circuit, and a DC to DC converter(34). The control logic unit generates a control signal according to an operation mode. The row driving circuit supplies a voltage to a WL node and a CG node by selecting one of 32 rows according to an address. The DC to DC converter supplies a VPP(+4.75V), a VNN(-4.75V), and a VNNL(VNN/2) for a writing function. [Reference numerals] (31) Memory cell array 32×16bit (32Rows×16Columns); (32) Row driving circuit; (33) Control logic unit; (34) DC-DC converter; (35,36) BL S/A &TG driving circuit |
