SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A semiconductor light emitting device is provided to improve the recombination efficiency of carriers by optimizing the thickness and the bandgap energy of each layer comprised of an active layer. CONSTITUTION: An n-type semiconductor layer(102) and a p-type semiconductor layer(104) are formed on a substrate(101). An active layer(103) is formed between the n-type and the p-type semiconductor layer. The active layer has a lamination structure of quantum well layers and quantum barrier layers. The quantum well layers are made of AlxInyGa1-x-yN(0<=x<1,0<y<=1). An ohmic electrode layer(105) is formed on the p-type semiconductor layer. A first electrode(106a) and a second electrode(106b) are formed in the n-type semiconductor layer and the upper surface of the ohmic electrode layer respectively.