| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element and a light-emitting device, which greatly improve a current density in a PN junction; maximize a heat sink effect (heat radiation effect); and achieve an increased light emission amount and improved light emission efficiency. <P>SOLUTION: A light-emitting device comprises: an overlapping part where a PN semiconductor lamination structure 1, a P-type semiconductor layer 11 and an N-type semiconductor layer 13 overlap each other; and a non-overlapping part 14 where the PN semiconductor lamination structure 1, the P-type semiconductor layer 11 and the N-type semiconductor layer 13 do not overlap each other. The non-overlapping part 14 is arranged lateral to the overlapping part and has a width W1 viewed in arrangement direction narrower than a width W2 of the overlapping part, and the N-type semiconductor layer 13 appears. A P-side electrode 5 and an N-side electrode 7 are provided on a surface on the side opposite to a light emission surface 30. The N-side electrode 7 is provided on the N-type semiconductor layer 13 in the non-overlapping part 14 and electrically insulated from the P-type semiconductor layer 11 and the P-side electrode 5 by an insulation gap G1. The P-side electrode 5 covers almost an entire surface of the P-type semiconductor layer 11 except the insulation gap G1. <P>COPYRIGHT: (C)2013,JPO&INPIT |
