SEMICONDUCTOR DEVICE STACKED PACKAGE AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A semiconductor device stacked package and a method for forming the same are provided to remove a copper contaminant generated in a process for etching the upper surface of a substrate to expose a through via. CONSTITUTION: A substrate(10) includes a lower surface(10a) where a passivation layer(11) is formed and an upper surface(10b) facing the lower surface. A through via(12) passes through the upper and the lower surface of the substrate. A first pad(14) electrically connected to the through via is formed on the passivation layer. A second pad(18) is formed on the through via exposed to the upper surface of the substrate. The second pads are electrically connected to the through vias, the first pads, and a first solder ball(16).