发明名称 QUANTUM DOT-MATRIX THIN FILM AND METHOD OF PRODUCING THE SAME
摘要 A quantum dot-matrix thin film and a method of preparing a quantum dot-matrix thin film are provided. The thin film includes quantum dots; an inorganic matrix in which the quantum dots are imbedded; and an interface layer disposed between the quantum dots and the inorganic matrix to surround surfaces of the quantum dots. The method includes preparing a quantum dot solution in which quantum dots with inorganic ligands are dispersed; adding a matrix precursor to the quantum dot solution; coating the quantum dot solution comprising the matrix precursor on a substrate; and annealing the substrate coated with the quantum dot solution.
申请公布号 US2013146834(A1) 申请公布日期 2013.06.13
申请号 US201213594141 申请日期 2012.08.24
申请人 CHO KYUNG-SANG;KU JI-YEON;CHOI BYOUNG-LYONG;SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO KYUNG-SANG;KU JI-YEON;CHOI BYOUNG-LYONG
分类号 H01L29/02;H01L21/20 主分类号 H01L29/02
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