发明名称 |
QUANTUM DOT-MATRIX THIN FILM AND METHOD OF PRODUCING THE SAME |
摘要 |
A quantum dot-matrix thin film and a method of preparing a quantum dot-matrix thin film are provided. The thin film includes quantum dots; an inorganic matrix in which the quantum dots are imbedded; and an interface layer disposed between the quantum dots and the inorganic matrix to surround surfaces of the quantum dots. The method includes preparing a quantum dot solution in which quantum dots with inorganic ligands are dispersed; adding a matrix precursor to the quantum dot solution; coating the quantum dot solution comprising the matrix precursor on a substrate; and annealing the substrate coated with the quantum dot solution.
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申请公布号 |
US2013146834(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201213594141 |
申请日期 |
2012.08.24 |
申请人 |
CHO KYUNG-SANG;KU JI-YEON;CHOI BYOUNG-LYONG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO KYUNG-SANG;KU JI-YEON;CHOI BYOUNG-LYONG |
分类号 |
H01L29/02;H01L21/20 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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地址 |
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